2 edition of Quantum oscillations in the magnetoresistance of tin. found in the catalog.
Quantum oscillations in the magnetoresistance of tin.
John Keith Hulbert
Thesis (Ph.D.- University ofBirmingham, Dept. of Physics, 1972.
Quantum oscillations in an insulator Even without a Fermi surface, a Kondo insulator exhibits magnetoresistance oscillations ABy N. P. Ong major triumph of the quantum theory of solids was the explana-tion (Bloch-Wilson theory) of the vast difference in electrical resis-tivity (14 orders of magnitude) be-tween insulators and metals. In a. by quantum oscillations. Here we report the magnetoresistance and Shubnikov-de Haas (SdH) quantum oscillation of longitudinal resistance in the single crystal of topological semimetal Ta 3SiTe 6 with the magnetic field up to 38 T. Periodic amplitude of the oscillations reveals related information about the Fermi surface. The.
The MR of NbSb 2 shows clear oscillations above 8 T field (inset in Fig. 3(a)), and the oscillation is very clear in the whole angle range implying dominant 3D FS. The MR does not saturate even in 35 T field. Instead it shows the quantum oscillations where MR approaches × 10 6 % in K and 32 T field [Fig. 3(a) inset]. Abstract: We present temperature dependent magnetoresistance measurements on the 2-dimensional electron gas of epitaxially grown AlGaN/GaN heterojunctions on silicon (Si). We report on the quantum correction to the classical conductance. In particular we found weak localization, electron-electron-interaction, and Shubnikov-de Haas oscillations.
The motion of charge carriers in a superlattice is different from that in the individual layers: mobility of charge carriers can be enhanced, which is beneficial for high-frequency devices, and specific optical properties are used in semiconductor lasers. If an external bias is applied to a conductor, such as a metal or a semiconductor, typically an electric current is generated. These formulas correct some previous results and allow the simple and effective interpretation of the magnetic quantum oscillations data in cuprate high-temperature superconducting materials, in organic metals and other Q2D metals. The relation between the angular dependence of magnetoresistance and of Fermi-surface cross-section area is derived.
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Volume 36A, number 5 PHYSICS LETTERS 27 September THE DINGLE FACTOR FOR QUANTUM OSCILLATIONS IN THE THERMAL MAGNETORESISTANCE OF TIN R. YOUNG Department of Physics, University of Birmingham, Birmingham, UK Received 14 August The field dependence of amplitude of the oscillatory thermal magnetoresistance of tin exhibits a sub- sidiary Cited by: 2.
Large amplitude quantum oscillations from orbits delta 1, delta 2 and tau are reported in the thermal magnetoresistance and thermoelectric EMF of tin.
The principal oscillations, from delta 1, correspond to the oscillations introduced into the electrical magnetoresistance by magnetic oscillations are accounted for, in detail, by introducing into the theory of thermal Cited by: Angular magnetoresistance oscillations have been studied systematically for beta-(ET)2 IBr2 in the magnetic field rotating in a series of planes perpendicular to the conducting (a, b)-plane.
In order to extract the oscillatory part of the magnetoresistance, the derivative of ρ x x (B) with respect to 1 / B was obtained numerically. Fast Fourier transform (FFT) was then performed in order to obtain the frequency f of the quantum oscillation.
The results are presented in Fig. 2(b). We have observed large quantum oscillations in the magnetoresistance of pure white tin at liquid-helium temperatures and in fields up to kG.
The oscillations are best developed when H is approximately 5° from the c axis and perpendicular to , and are interpreted as a magnetic breakdown effect which gives rise to a linear chain of coupled by: A very high-frequency (×10 8 G) quantum oscillation corresponding to the quantization of flux through the cross section of the Brillouin zone-Pippard's "zone oscillation"-is found when H--> is within 1 o of the c axis.
It is best seen at o K, where it constitutes 5% of the resistance, while its anomalously small effective mass causes it to be swamped by slower oscillations at 1o. quantum oscillations of magnetoresistance shown in Fig. 2, curve Figure 3 revealed only one resonance frequency for each selected temperatures.
The amplitudes of the cyclotron resonance decrease with increasing temperatures from K to 10 K, they being equal to 23, 24 and 25 T for.
(a) Quantum oscillations in −d 2 G xx /dB 2 and −d 2 G xy /dB 2 in InAs. (b) Fourier analysis on the − d 2 G xx / dB 2 signal at low field (blue zone) and (c) at high field (grey zone). (For interpretation of the references to colour in this figure legend, the.
Here, we report the magnetoresistance and Shubnikov-de Haas (SdH) quantum oscillation of longitudinal resistance in the single crystal of topological semimetal candidate Ta 3 SiTe 6 with a magnetic field up to 38 T. The periodic amplitude of the oscillations shows related information about the Fermi surface.
Large amplitude quantum oscillations from orbits 6'. h2 and T are reported in the thermal magnetoresistance and thermoelectric EMF of tin. The principal oscillations, from a', correspond to the oscillations introduced into the electrical magnetoresistance by magnetic breakdown.
More interestingly, the pronounced Shubnikov–de Hass oscillations can be clearly observed from the very large and nearly linear magnetoresistance (>% at 14 T and 2 K) in Se-poor Bi 2 O 2 Se.
A close analysis of the results reveals that the large and linear magnetoresistance observed can be ascribed to the spatial mobility fluctuation.
The marked strain dependence of the minima resulting from open orbits permits their unambiguous identification as resulting from magnetic breakdown at a symmetry degeneracy, de Haas–Shubnikov oscillations were observed, and complementary de Haas–van Alphen measurements showed the lower frequencies (in the range – MG) to correspond.
We report the observation of a large linear magnetoresistance (MR) and Shubnikov-de Hass (SdH) quantum oscillations in single crystals of YPdBi Heusler topological insulators. Owning to the successfully obtained the high-quality YPdBi single crystals, large non-saturating linear MR of as high as % at 5K and over % at K under a.
Effect of disorder on magnetoresistance oscillations in nanoperforated superconducting TiN films Article in Bulletin of the Russian Academy of Sciences Physics 72(2) February with. Magnetoresistance and Shubnikov–de Haas oscillations in layered Nb3SiTe6 thin flakes. Physical Review B97 (23) DOI: /PhysRevB Fengyu Kong, Wei Ning, Anding Wang, Yan Liu, Mingliang Tian.
Increasing the size of mesoscopic devices based on van der Waals heterostructures triggers additional quantum effects. Here, the authors observe distinct magnetoresistance oscillations in. This book was first published in and gives a systematic account of the nature of the oscillations, of the experimental techniques for their study and of their connection with the electronic structure of the metal concerned.
11 - Damping of giant quantum oscillations by electron scattering pp Get access. Check if you have. Tensile strained gray tin: Dirac semimetal for observing negative magnetoresistance with Shubnikov–de Haas oscillations Huaqing Huang 1and Feng Liu,2 * 1Department of Materials Science and Engineering, University of Utah, Salt Lake City, UtahUSA 2Collaborative Innovation Center of Quantum Matter, BeijingChina.
Quantum oscillations in the transverse magnetoresistance of aluminum single crystals were measured at K in fields near the  direction of up to 50 kOe. The rotation diagrams around two axes, the current axis (θ-rotation) and normal to it (Φ-rotation), were investigated by directly measuring the amplitude of oscillations in steps of about †.
A spectacular anisotropy observed in Cu is explained based on the nonspherical Fermi surface of this metal in this chapter. Magnetic oscillations found in the susceptibility also manifest themselves in magnetoresistance at low temperatures.
A quantum theory is developed for the Shubnikov–de Haas oscillation for a 2D system. It shows a field-induced universal TI resistivity with a plateau at roughly 15 K, ultrahigh mobility of carriers in the plateau region, quantum oscillations with the angle dependence of a two.A major triumph of the quantum theory of solids was the explanation (Bloch-Wilson theory) of the vast difference in electrical resistivity (14 orders of magnitude) between insulators and metals.
In a metal, the conduction electrons define a Fermi surface, whose existence leads to quantum oscillations in resistivity versus a magnetic field. Insulators, with bands completely filled, have no.SdH oscillations in D=3 are sensitive to the extremal cross-sections of Fermi surface, which depend on the orientation of magnetic ﬁeld w.r.p.t.
crystal axes Thus SdH can, and indeed are, used to map out the Fermi surface 3D shapes. L Levitov, Quantum transport