2 edition of Ion implantation waveguide formation in transition metal ion doped insulators found in the catalog.
Ion implantation waveguide formation in transition metal ion doped insulators
Niall A. Gallen
Written in English
D.Phil. 2000. BLDSC DXN032572.
|Statement||[by] N. A. Gallen.|
|Series||Sussex theses ; S 4939|
Ion implantation may be used to produce barrier‐confined optical waveguides in many crystalline materials by decreasing the refractive index in the nuclear stopping region at the end of the ion’s track. In quartz this is particularly effective as the nuclear damage soon saturates at ∼5%, and also practically no index change occurs along the initial part of the track, thus enabling. Advantages of Ion Implantation "Precise control of dose and depth profile "Low-temp. process (c an use photoresist as mask) "Wide selection of masking materials e.g. photoresist, oxide, poly-Si, metal "Less sensitive to surface cleaning procedures "Excellent lateral dose uniformity .
Ion Implantation _____ Introduction Ion implantation has been the dominating doping technique for silicon integrated circuit for past 30 years. It is expected to remain as the mean for doping technique for the foreseeable future. Like diffusion process, it is a process where dopant is introduced using ion species such as BF 3 and PF 5. Ion implantation is a standard doping technique for semiconductor materials, and accurate predictions of the resulting ion implantation profiles are essential for process development. For this purpose, efforts are being made to construct a database. The ion implantation conditions used in very-large-scale.
Ion implantation is the low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target. The components of ion implantation are often made of TZM alloy, molybdenum, tungsten because these materials could perform well in the harsh environment. combination of ion-doped TiO 2 with semiconductor or dielectric substrates by same technique as ion implantation could be reached quite effective in practice. Several approaches for TiO 2 modification was recently proposed: metal-ion implantation of TiO 2 (using transition metals such as Cu, Co, Ni, Cr, Mn, Mo, Nb, V, Fe, Ru, Au, Ag, Pt) [
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Application for the formation of heavily doped layers. Ion implantation can possibly be used for the formation of source and drain regions of the electrodes in, for example, diamond FET devices.
The source and drain regions in electrodes must exhibit low resistivity, and carriers should be able to travel smoothly across the interface. Ion implantation is a low-temperature process by which ions of one element are accelerated into a solid target, thereby changing the physical, chemical, or electrical properties of the target.
Ion implantation is used in semiconductor device fabrication and in metal finishing, as well as in materials science research. The ions can alter the elemental composition of the target (if the ions.
Ion Implantation. Pure metal nanoclusters and nanoalloys can be produced by ion implantation in insulating matrices, such as silica matrices. In ion implantation, the matrix is bombarded by a high-energy beam of metal cations, which enter the matrix and are incorporated there.
Ion implantation waveguide formation in transition metal ion doped insulators. Author: Gallen, Niall Anthony. ISNI ION IMPLANTATION; TRANSITION ELEMENTS; ELECTRICAL INSULATORS; DOPED MATERIALS Share: Terms and. Insulator-to-metal transition (IMT) has also been reported in S- and Se-hyperdoped silicon 6,11,12, which is a direct evidence for the formation of an IB.
Titanium is Cited by: 4. Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects.
Monomode enhanced-index Nd 3+ -doped silicate glass waveguides fabricated by ion implantation are reported.
The Nd 3+ -doped silicate glass was implanted by MeV B + ions, MeV O + ions and MeV Ni 2+ ions, respectively. A prism-coupling method was carried out to measure dark modes in the Nd3+-doped silicate glass using a model prism coupler.
Low-temperature IE is based on substituting one kind of alkali cations (usually Na þ) in glass for another one (Li þ, K þ, Rb þ, Cs þ) or transition metal ions (Ag þ, Cu þ, Tl þ. We report on the formation and the optical properties of the planar and ridge optical waveguides in rutile TiO2 crystal by He+ ion implantation combined with micro-fabrication technologies.
Planar optical waveguides in TiO2 are fabricated by high-energy ( MeV) He+-ion implantation with a dose of 3 × ions/cm2 and triple low energies (,) keV He+-ion implantation with all. The behavior of these oscillation parameters and the dielectric function revealed that the ion implantation caused a phase transition, probably amorphization, in the implanted layer, and that the.
We discuss ion implantation as a powerful non-equilibrium processing technology and show its potential for optical waveguide formation by damage engineering and by direct doping.
Also the strong improvement of photorefractive properties by implantation-induced vacancies is demonstrated. Finally recent results of the growth of thin ferroelectric films by laser epitaxy and metal-organic vapor.
This generates an amorphous layer at the end of the ion range which effectively isolates the surface crystal from the bulk.
During implantation there are changes in the luminescence of the quartz which parallel the amorphisation. The present study has measured the efficiency of the process as a function of ion. Ion implantation is a major application of plasma processing in a variety of applications in which the surfaces of materials are to be treated.
The implantation process requires a source of ions and a means to accelerate them toward the surface. Two general methods are in use today: ion beam. Georgia Tech ECE - Dr. Alan Doolittle Advantages of Ion Implantation: 1.) Very precise control of the dose 2.) Independent control of impurity depth and dose 3.) Very fast (1 12" wafer can take as little as 25 seconds for a moderate dose).
We discuss ion implantation as a powerful non-equilibrium processing technology and show its potential for optical waveguide formation by damage engineering and by direct doping. Also the strong improvement of photorefractive properties by implantation-induced vacancies is demonstrated.
Finally recent results of the growth of thin ferroelectric films by laser epitaxy and metal-organic vapor. With the n-doped substrate under the silicon oxide layer as the global back gate, metal oxide semiconductor FET was finished by ion implantation and optical lithography (details in Figure 8).
Colli et al. [ 2 ] implanted P or B ions into silicon nanowires that have a thick oxide shell surrounding the silicon core and then evaporated Ni on the.
According to the Aufbau process, the electrons fill the 4 s sublevel before beginning to fill the 3 d sublevel. However, the outermost s electrons are always the first to be removed in the process of forming transition metal cations.
Because most transition metals have two valence electrons, the charge of 2+ is a very common one for their ions.
The metal insulator transition in Sr 2 IrO 4 will be discussed to highlight the debate whether the low temperature antiferromagnetic insulating state is a Mott insulator or a Slater insulator, where the insulating gap is associated with the onset of long range antiferromagnetic order. Lastly, we will discuss the possibility of a Mott-insulating.
Ion implantation doesn’t form a glass layer, resulting in a simpler, cheaper manufacturing process. Dopants are only implanted where the p-n junction is required.
The edges and backside are not doped, so no expensive and potentially damaging laser isolation is required. Ion beam Insulator Ion source Disk Wafers Target holder (disk) Wafer load and unload area kV power supply Source, magnet, power supply FIGURE Schematic Of a commercial ion-implantation system, the Nova, 10 mA at kev.
Energetic ions. Our authors and editors. We are a community of more thanauthors and editors from 3, institutions spanning countries, including Nobel Prize winners and some of .A review is given of the applications of ion implantation in III–V compound semiconductor device technology, beginning with the fundamentals of ion stopping in these materials and describing the use of implantation for both doping and isolation.Ion implantation of H2+ or O+ ions in the range 0–× and 0–×/cm2, respectively, was used to investigate the effect of implant‐induced damage on the electrical properties of Sn‐doped In2O3 (ITO) films deposited by electron‐beam evaporation on SiO2‐coated soda‐lime glass substrates.
The films were characterized as a function of implant dose using low‐temperature.